PART |
Description |
Maker |
2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
45912-0026 0459120026 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Power, Signal, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification Silicon NPN epitaxial planar type
|
Panasonic Semiconductor
|
MCP-02D-0805 MCP-02S-08 MCP-02D-0803 MCP-02D-1403 |
2W Output Power Compact, Board Mount 2W Constant Power Mode AC/DC Power Supplies
|
MicroPower Direct, LLC
|
2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
2SC5993 |
Power Device - Power Transistors - Television/Display For power amplification For TV VM circuit
|
PANASONIC[Panasonic Semiconductor]
|
TB2959HQ |
Maximum Power 47W BTL 4-ch Audio Power IC Power amplifier ICs
|
Toshiba Semiconductor
|
2SD1445A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|